SI4431DY |
RFQ for SI4431DY |
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| Product | Manufacturers | Pack | D/C |
| SI4431DY | - | SOP8 | 00+ |
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Typical Application |
Features |
| • DC/DC converter• Load switch• Motor Drive | • 6.3 A, 30 V. RDS(ON) = 0.032 @ VGS = -10 V RDS(ON) = 0.05 @ VGS = -4.5 V• Low gate charge• Fast switching speed• High performance trench technology for extremely low RDS(ON)• High power and current handling capability |
| Symbol | Parameter | Ratings | Units |
| VDSS | Drain-Source Voltage | -30 | V |
| VGSS | Gate-Source Voltage | ±20 | V |
| ID | Drain Current - Continuous (Note 1a) - Pulsed |
-6.3 | A |
| -40 | |||
| PD | Power Dissipation for Single Operation (Note 1a (Note 1b) (Note 1c) |
2.5 | W |
| 1.2 | |||
| 1 | |||
| TJ, Tstg | Operating and Storage Junction Temperature Range | -55 to +150 | °C |